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2SC3074
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
High Current Switching Applications
* * * Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 s (typ) Complementary to 2SA1244 Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 5 1 1.0 20 150 -55 to 150 Unit V V V A A W C C
JEDEC JEITA TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC JEITA TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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2SC3074
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 Min 50 70 30 OUTPUT 10 Typ. 0.2 0.9 120 80 0.1 Max 1 1 240 0.4 1.2 V V MHz pF Unit A A V
DC current gain
hFE (1) VCE = 1 V, IC = 1 A (Note) hFE (2) VCE = 1 V, IC = 3 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time
VCE (sat) VBE (sat) fT Cob ton
20 s INPUT IB1
IB1 IB2
Switching time
Storage time
tstg
IB2
1.0
s
VCC = 30 V 0.1
Fall time
tf
IB1 = -IB2 = 0.15 A, Duty cycle 1%
Note: hFE (1) classification
O: 70 to 140, Y: 120 to 240
Marking
C3074
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SC3074
IC - VCE
10 Common emitter 8 100 90 Tc = 100C 80 70 60 6 50 40 30 20 2 IB = 10 mA 0 0 0 2 4 6 8 10 12 0 0 1 2 1.0 1.2
VCE - IC
Common emitter Tc = 25C IB = 10 mA 20 40 60 80 100 150 0.6 200 0.4 300 500
IC (A)
Collector-emitter voltage VCE (V)
0.8
Collector current
4
0.2
3
4
5
6
7
Collector-emitter voltage
VCE
(V)
Collector current IC (A)
VCE - IC
1.2
VCE - IC
(V)
Common emitter Tc = 100C Common emitter 1.0 IB = 20 mA 40 120 160 200 Tc = -55C
VCE
(V)
1.0
0.8 20 0.6 IB = 10 mA 40 60
80 100 120
VCE Collector-emitter voltage
150 200 500
0.8
Collector-emitter voltage
0.6 250 300 500
0.4
0.4
0.2
0.2
0 0
1
2
3
4
5
6
7
0 0
1
2
3
4
5
6
7
Collector current IC (A)
Collector current IC (A)
hFE - IC
1000 500 VCE = 1 V Tc = 100C 25 1
VCE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter Common emitter 0.5 IC/IB = 20 0.3 Tc = -55C 0.1 0.05 0.03 100 25
hFE DC current gain
300
100 50 30
-55
10 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
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2SC3074
VBE (sat) - IC
10 Common emitter 5
IC - VBE
Common emitter VCE = 1 V 4
Base-emitter saturation voltage VBE (sat) (V)
5 3
IC/IB = 20
IC (A) Collector current
Tc = -55C
1 0.5 0.3
3 Tc = 100C 2 -55 25
25 100
1
0.1 0.03
0.1
0.3
1
3
10 0 0 0.4 0.8 1.2 1.6 2.0 2.4
Collector current IC (A)
Base-emitter voltage
VBE
(V)
Safe Operating Area
10 28
PC - Ta
PC (W)
(1) Tc = Ta infinite heat sink 24 20 16 12 8 4 0 0 (2) (3) 20 40 60 80 100 120 140 160 (1) (2) Ceramic substrate 50 x 50 x 0.8 mm (3) No heat sink
5 3
IC max (pulsed)* IC max (continuous) DC operation Tc = 25C
1 ms* 10 ms*
IC (A)
1 0.5 0.3
0.1 *: Single nonrepetitive pulse 0.05 0.03 Tc = 25C Curves must be derated linearly with increase in 0.01 0.1 temperature. 0.3 1 3 10 30 100 VCEO max
Collector power dissipation
Collector current
Ambient temperature
Ta
(C)
Collector-emitter voltage
VCE
(V)
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2SC3074
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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